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GT60M303A Datasheet PDF - Toshiba

Part NumberGT60M303A Toshiba
Toshiba Toshiba
DescriptionDiscrete IGBTs
GT60M303A Datasheet PDF :   
GT60M303A image Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.

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