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GT60M303A Datasheet PDF - Toshiba

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Part NumberGT60M303A Toshiba
Toshiba Toshiba
DescriptionDiscrete IGBTs
GT60M303A Datasheet PDF : GT60M303A pdf   
30J124 image Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
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