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30F122 Datasheet PDF - Toshiba

Part Number30F122 Toshiba
Toshiba Toshiba
DescriptionIGBT / Insulated Gate Bipolar Transistor Silicon N-Channel
30F122 Datasheet PDF : 30F122 pdf   
GT30F122 image

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages


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