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30F121 Datasheet PDF - Toshiba

Part NameDescriptionManufacturer
30F121 Insulated Gate Bipolar Transistor Toshiba
Toshiba Toshiba
30F121 Datasheet PDF : 30F121 pdf   
30F121 image

Features of the Toshiba Discrete IGBTs

IGBT: Insulated Gate Bipolar Transistor

● IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
   advantage of high-voltage drive.
● The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
   applications that require high breakdown voltage and high current.
● Toshiba offers a family of fast switching IGBTs, which are low injection
   and recombination in the carrier.

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

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