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2SK3766 Datasheet PDF - Toshiba

Part NameDescriptionManufacturer
2SK3766 Silicon N-Channel MOS Type (π -MOSVI) Field Effect Transistor Toshiba
Toshiba Toshiba
2SK3766 Datasheet PDF : 2SK3766 pdf   
2SK3766 image

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.65 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA)

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