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2SK3127 Datasheet PDF - Toshiba

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2SK3127 Datasheet PDF : 2SK3127 pdf     
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Field Effect Transistor   Silicon N Channel MOS Type (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

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Part Name
Description
PDF
Manufacturer
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Unspecified
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L²-π-MOSIII)
Unspecified
Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Hitachi -> Renesas Electronics
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV)
Unspecified
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Unspecified
TRANSISTOR SILICON N CHANNEL MOS TYPE(π-MOS)
Unspecified
MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor
NEC => Renesas Technology

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