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2SK2611T Datasheet PDF - Toshiba

Part Number2SK2611T Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611T Datasheet PDF : 2SK2611T pdf   2SK2611T pdf   
2SK2611 image

DC−DC Converter, Relay Drive and Motor Drive Applications

1. Low drain−source ON-resistance  : RDS (ON)= 1.2 Ω(typ.)

2. High forward transfer admittance  : |Yfs| =7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

2SK2611T

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