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2SJ105GR Datasheet PDF - Toshiba

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  1997   2003  
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2SJ105GR Datasheet PDF : 2SJ105GR pdf     
2SJ105 image

For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications

• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
• Complimentary to 2SK330
• Small package

Page Link's: 1  2  3  4 
 

Part Name
Description
PDF
Manufacturer
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Unspecified
Silicon N Channel Junction Type Field Effect Transistor
TY Semiconductor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
Unspecified
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Unspecified
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV)
Unspecified
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Unspecified
SILICON N-CHANNEL JUNCTION-TYPE FIELD EFFECT TRANSISTOR FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION
SANYO -> Panasonic
Silicon N-Channel Junction-Type Field Effect TR
SANYO -> Panasonic

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