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2SC3076O Datasheet PDF - Toshiba

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  2005   2010  
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2SC3076O Datasheet PDF : 2SC3076O pdf     
2SC3076 image

Power Amplifier Applications
Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1241

 

Part Name
Description
PDF
Manufacturer
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
Silicon NPN Epitaxial Type (PCT process) Transistor
TY Semiconductor
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE ( PCT PROCESS)
KEC
Silicon NPN Epitaxial Type (PCT Process) Transistor
TY Semiconductor
Silicon NPN Epitaxial Type (PCT Process) Transistor
TY Semiconductor
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified

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