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2SC3076 Datasheet PDF - Toshiba

Part NameDescriptionManufacturer
2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Toshiba
Toshiba Toshiba
Other PDF  2005   2010   2002  
2SC3076 Datasheet PDF : 2SC3076 pdf   
2SC3076 image

Power Amplifier Applications
Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1241

 

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