The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits.
A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Special feature are low power consumption and high speed.
The CXK591000TM/YM/M is a suitable RAM for portable equipment with battery back up and parity bit.
• Fast access time
CXK591000TM/YM/M (Access time)
-55LL 55ns (Max.)
-70LL 70ns (Max.)
-10LL 100ns (Max.)
• Low standby current
-55LL/70LL/10LL 24µA (Max.)
• Low data retention current
-55LL/70LL/10LL 14µA (Max.)
• Single +5V supply: 5V ± 10%.
• Low voltage date retention: 2.0V (Min.)
• Broad package line-up
8mm ×20mm 32 pin TSOP Package
CXK591000M 525mil 32 pin SOP Package