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KM416L8031BT-GFZ Datasheet PDF - Samsung

Part NameDescriptionManufacturer
KM416L8031BT-GFZ 128Mb DDR SDRAM Samsung
Samsung Samsung
KM416L8031BT-GFZ Datasheet PDF : KM416L8031BT-GFZ pdf   
DDRSDRAM image

Key Features
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
   -. Read latency 2, 2.5 (clock)
   -. Burst length (2, 4, 8)
   -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval
• Maximum burst refresh cycle : 8
• 66pin TSOP II package

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