datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  
HOME  >>>  Samsung  >>> K9F2G08R0A PDF

K9F2G08R0A Datasheet PDF - Samsung

Part NameDescriptionManufacturer
K9F2G08R0A 256M x 8 Bit NAND Flash Memory Samsung
Samsung Samsung
Other PDF  no available.
K9F2G08R0A Datasheet PDF : K9F2G08R0A pdf   
K9F2G08UXA image

GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES
• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
   63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
   48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
   52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44 
 

Other manufacturer searches related to K9F2G08R0A

Part NameDescriptionPDFManufacturer
HN29W25611 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) HN29W25611 View Hitachi -> Renesas Electronics
HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) HN29W25611T-50H View Hitachi -> Renesas Electronics
H27UAG8T2B 16Gbit (2048 M x 8 bit) NAND Flash Memory H27UAG8T2B View Hynix Semiconductor
HY27UF084G2B 4Gbit (512Mx8bit) NAND Flash Memory HY27UF084G2B View Hynix Semiconductor
TH58NVG 2GBIT (256M u 8BITS) CMOS NAND E2PROM TH58NVG View Unspecified
EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only EN29LV160C View Eon Silicon Solution Inc.
EN29LV800 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only EN29LV800 View Eon Silicon Solution Inc.
M6MFT16S2TP 16777216-BIT(2M x 8-BIT/1Mx 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY M6MFT16S2TP View MITSUBISHI ELECTRIC
H27S4G6F2D 4 Gbit (512M x 8 bit) NAND Flash Memory H27S4G6F2D View Hynix Semiconductor
NAND04GA3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory NAND04GA3C2A View STMicroelectronics

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]