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Y34NB50 Datasheet PDF - STMicroelectronics

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Y34NB50 Datasheet PDF : Y34NB50 pdf     
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.11 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPREAD

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE

 

Part Name
Description
PDF
Manufacturer
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor
500V N-Channel MOSFET
Fairchild Semiconductor

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