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STU16NB50 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STU16NB50 Datasheet PDF : STU16NB50 pdf   
STU16NB50 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.28 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ± 30V GATE TO SOURCE VOLTAGE RATING

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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