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STP4NA100 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  no available.
STP4NA100 Datasheet PDF : STP4NA100 pdf   
STP4NA100 image

DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL RDS(on)= 2.9 Ω
■ ±30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD

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