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STP16NE06L/FP Datasheet PDF - STMicroelectronics

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STP16NE06L/FP Datasheet PDF : STP16NE06L/FP pdf     
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DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.09 Ω
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

 

Part Name
Description
PDF
Manufacturer
Single P-Channel Enhancement Mode MOSFET
Fairchild Semiconductor
Single N-Channel Enhancement Mode MOSFET
Fairchild Semiconductor
Single P-Channel Enhancement Mode MOSFET
Chino-Excel Technology
Single P-Channel Enhancement Mode MOSFET
Chino-Excel Technology
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
P-Channel Enhancement Mode Power MOSFET
Unspecified
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified

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