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STP10NB20 Datasheet PDF - STMicroelectronics

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STP10NB20 Datasheet PDF : STP10NB20 pdf     
STP10NB20FP image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 

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Part Name
Description
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Manufacturer
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
Unspecified
N-Channel Enhancement Mode MOSFET
SHIKE Electronics
N-Channel Enhancement Mode MOSFET
ZP Semiconductor
N-Channel Enhancement Mode MOSFET
SHIKE Electronics
N-channel Enhancement Mode MOSFET
TY Semiconductor

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