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STP10NA40FI Datasheet PDF - STMicroelectronics

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STP10NA40FI Datasheet PDF : STP10NA40FI pdf     
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DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL RDS(on) = 0.46 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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Part Name
Description
PDF
Manufacturer
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New Jersey Semiconductor
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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New Jersey Semiconductor
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P-channel enhancement mode MOS transistor
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