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STD20N06-1 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STD20N06-1 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  no available.
STD20N06-1 Datasheet PDF : STD20N06-1 pdf   
STD20N06 image

DESCRIPTION
This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability.

■ TYPICAL RDS(on) = 0.026 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ HIGH CURRENT CAPABILITY
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt RUGGEDNESS
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCRONOUS RECTIFICATION

 

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