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STD19NE06L Datasheet PDF - STMicroelectronics

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STD19NE06L Datasheet PDF : STD19NE06L pdf     
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DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.038 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RALAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS

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Part Name
Description
PDF
Manufacturer
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET
STMicroelectronics
N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET
STMicroelectronics
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET
STMicroelectronics
Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
Unspecified
Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
Secos Corporation.
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
Intersil

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