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STD12N06LT4 Datasheet PDF - STMicroelectronics

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STD12N06LT4 Datasheet PDF : STD12N06LT4 pdf     
STD12N06L image

■ TYPICAL RDS(on) = 0.115 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
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Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
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Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
Supertex Inc
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Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
Supertex Inc
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semiconductor

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