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STD11NM60N-1 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STD11NM60N-1 N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  2008  
STD11NM60N-1 Datasheet PDF : STD11NM60N-1 pdf   
STB11NM60N image

Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features   
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
   
Application
■ Switching applications
   

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