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MSC83303 Datasheet PDF - STMicroelectronics

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MSC83303 Datasheet PDF : MSC83303 pdf     
MSC83301 image

DESCRIPTION
The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER BALLASTED
■ VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
■ HERMETIC STRIPAC® PACKAGE
■ POUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz

 

Part Name
Description
PDF
Manufacturer
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Microsemi Corporation
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Advanced Power Technology
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Advanced Power Technology
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Microsemi Corporation
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
New Jersey Semiconductor
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Microsemi Corporation
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
New Jersey Semiconductor

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