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MSC82307 Datasheet PDF - STMicroelectronics

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MSC82307 Datasheet PDF : MSC82307 pdf     
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DESCRIPTION
The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.
The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.

■ REFRACTORY/GOLD METALLIZATION
■ VSWR CAPABILITY 20:1 @ RATED CONDITIONS
■ HERMETIC STRIPAC® PACKAGE
■ POUT = 7.0 W MIN. WITH 9.6 dB GAIN

 

Part Name
Description
PDF
Manufacturer
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Microsemi Corporation
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Advanced Power Technology
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
Advanced Power Technology
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Microsemi Corporation
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
New Jersey Semiconductor
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Microsemi Corporation
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
New Jersey Semiconductor

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