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M54HC03D1 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
M54HC03D1 RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  no available.
M54HC03D1 Datasheet PDF : M54HC03D1 pdf   
M54HC03D1 image

DESCRIPTION
The M54HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a led driver and in any other application requiring a current sink.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.

■ HIGH SPEED:
   tPD = 8ns (TYP.) at VCC = 6V
■ LOW POWER DISSIPATION:
   ICC = 1µA(MAX.) at TA=25°C
■ HIGH NOISE IMMUNITY:
   VNIH = VNIL = 28% VCC (MIN.)
■ BALANCED PROPAGATION DELAYS:
   tPLH = tPHL
■ WIDE OPERATING VOLTAGE RANGE:
   VCC (OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 03
■ SPACE GRADE-1: ESA SCC QUALIFIED
■ 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST
■ NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION
■ DEVICE FULLY COMPLIANT WITH SCC-9201-114

 

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