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M29F010B120N3T Datasheet PDF - STMicroelectronics

Part NumberM29F010B120N3T ST-Microelectronics
STMicroelectronics ST-Microelectronics
Description1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
M29F010B120N3T Datasheet PDF : M29F010B120N3T pdf   
M29F010B70P1 image

SUMMARY DESCRIPTION
The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ACCESS TIME: 45ns
■PROGRAMMING TIME
–8µs per Byte typical
■8 UNIFORM 16 Kbytes MEMORY BLOCKS
■PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■LOW POWER CONSUMPTION
– Standby and Automatic Standby
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h

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