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3N150 Datasheet PDF - STMicroelectronics

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3N150 Datasheet PDF : 3N150 pdf     
STFW3N150 image

Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.

■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF

Application
Switching applications
 

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Part Name
Description
PDF
Manufacturer
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
Unspecified
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET
Unspecified
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
Unspecified
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
1500W Single Output Power Supply
RSG Electronic Components GmbH
1500W Single Output Power Supply - RSP-1500 series
Unspecified

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