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4N60B Datasheet PDF - Xian Semipower Electronic Technology Co., Ltd.

Part NameDescriptionManufacturer
Xian Semipower Electronic Technology Co., Ltd. SEMIPOWER
Other PDF  no available.
4N60B Datasheet PDF : 4N60B pdf   
SW4N60B image

General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.

■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested

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