datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  
HOME  >>>  Renesas  >>> RQA0009TXDQS PDF

RQA0009TXDQS Datasheet PDF - Renesas Electronics

Part NameDescriptionManufacturer
RQA0009TXDQS Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
RQA0009TXDQS Datasheet PDF : RQA0009TXDQS pdf   
RQA0009TXDQS image

Features
• High Output Power, High Gain, High Efficiency
   Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
   (VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
   (IEC Standard, 61000-4-2, Level4)

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13 

 

Other manufacturer searches related to RQA0009TXDQS

Part NameDescriptionPDFManufacturer
2SK812 MOS FIELD EFFECT TRANSISTOR(FAST SWITCHING N-CHANNEL SILICON POWER MOS FET) 2SK812 View NEC => Renesas Technology
2SJ183 SILICON P-CHANNEL MOS FET 2SJ183 View Unspecified
2SK685 SILICON N-CHANNEL MOS FET 2SK685 View Unspecified
2SJ115 SILICON P-CHANNEL MOS FET 2SJ115 View Unspecified
2SJ116 SILICON P-CHANNEL MOS FET 2SJ116 View New Jersey Semiconductor
2SK410 SILICON N-CHANNEL MOS FET 2SK410 View Advanced Semiconductor
2SJ118 SILICON P-CHANNEL MOS FET 2SJ118 View Unspecified
2SK655 Silicon N-Channel MOS FET 2SK655 View Panasonic Corporation
2SK1517 Silicon N-Channel MOS FET 2SK1517 View New Jersey Semiconductor
2SK641 SILICON N-CHANNEL MOS FET 2SK641 View Unspecified

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]