datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  Renesas  >>> NE5550779A-T1A PDF

NE5550779A-T1A Datasheet PDF - Renesas Electronics

Part NumberNE5550779A-T1A Renesas
Renesas Electronics Renesas
DescriptionSilicon Power LDMOS FET
NE5550779A-T1A Datasheet PDF : NE5550779A-T1A pdf   
NE5550779A image

FEATURES
•  High Output Power   : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance  
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17 
 
Share Link : 

Language : 한국어   简体中文   日本語   русский   español


@ 2014 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]