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NE5550779A-T1A-A Datasheet PDF - Renesas Electronics

Part NumberNE5550779A-T1A-A Renesas
Renesas Electronics Renesas
DescriptionSilicon Power LDMOS FET
NE5550779A-T1A-A Datasheet PDF : NE5550779A-T1A-A pdf   
NE5550779A image

FEATURES
•  High Output Power   : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance  
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

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