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N0602N-S19-AY Datasheet PDF - Renesas Electronics

Part Name
Description
Manufacturer
N0602N-S19-AY
Renesas
Renesas Electronics Renesas
Other PDF
  no available.
PDF
N0602N-S19-AY Datasheet PDF : N0602N-S19-AY pdf     
N0602N image

Description
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
• Low on-state resistance
   RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
   Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
   ID(DC) = ±100 A
• RoHS Compliant

 

Page Link's: 1  2  3  4  5  6  7  8 
 

Part Name
Description
PDF
Manufacturer
N-Channel and P-Channel Silicon MOSFET General-Purpose Switching Device Applications
SANYO -> Panasonic
P-CHANNEL MOSFET FOR SWITCHING
TY Semiconductor
MOSFET N-channel enhancement switching transistor
NXP Semiconductors.
SWITCHING N-CHANNEL POWER MOSFET
KEXIN Industrial
SWITCHING N-CHANNEL POWER MOSFET
TY Semiconductor
SWITCHING N-CHANNEL POWER MOSFET
KEXIN Industrial
SWITCHING N-CHANNEL POWER MOSFET
TY Semiconductor
SWITCHING N-CHANNEL POWER MOSFET
TY Semiconductor
SWITCHING N-CHANNEL POWER MOSFET
TY Semiconductor
SWITCHING N-CHANNEL POWER MOSFET
NEC => Renesas Technology

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