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N0602N-S19-AY Datasheet PDF - Renesas Electronics

Part NameDescriptionManufacturer
N0602N-S19-AY N-CHANNEL MOSFET FOR SWITCHING Renesas
Renesas Electronics Renesas
Other PDF  no available.
N0602N-S19-AY Datasheet PDF : N0602N-S19-AY pdf   
N0602N image

Description
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
• Low on-state resistance
   RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
   Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
   ID(DC) = ±100 A
• RoHS Compliant

 

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