These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.
• Specially designed for low loss RF switching
up to 1 GHz.
• Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.