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MJ11022G Datasheet PDF - ON Semiconductor

Part NameDescriptionManufacturer
MJ11022G Complementary Darlington Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
Other PDF  2008  
MJ11022G Datasheet PDF : MJ11022G pdf   
MJ11022 image

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
   
Features
• High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
                 VCEO(sus) = 250 Vdc (Min) − MJ11022, 21
• Low Collector−Emitter Saturation
                 VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
                                 = 1.8 V (Typ) @ IC = 10 A
• 100% SOA Tested @ VCE = 44 V
                                      IC = 4.0 A
                                      t = 250 ms
• Pb−Free Packages are Available*
   

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