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MBR20100CT Datasheet PDF - ON Semiconductor

Part NameDescriptionManufacturer
MBR20100CT SWITCHMODE™ Power Rectifiers ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBR20100CT Datasheet PDF : MBR20100CT pdf   
MBR2080CT image

This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:

Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*

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