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1N5817 Datasheet PDF - ON-Semiconductor

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Part Number1N5817 ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817 Datasheet PDF : 1N5817 pdf   
1N5818 image

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

 

1N5817

Features
1. Extremely Low VF
2. Low Stored Charge, Majority Carrier Conduction
3. Low Power Loss/High Efficiency
4. These are Pb−Free Devices*

 

Official Site : http://www.onsemi.com/PowerSolutions/product.do?id=1N5818

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