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JS28F128P30BF65 Datasheet PDF - Numonyx

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Part NumberJS28F128P30BF65 Numonyx
Numonyx -> Micron Numonyx
DescriptionNumonyx® Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
JS28F128P30BF65 Datasheet PDF : JS28F128P30BF65 pdf   

Image Info : [Numonyx] PC28F128P30BF65A

Introduction
This document provides information about the Numonyx® AxcellTM P30-65nm Single Bit per Cell (SBC) Flash memory and describes its features, operations, and specifications.
P30-65nm SBC device is offered in 64-Mbit and 128-Mbit. Benefits include high-speed interface NOR device, and support for code and data storage. Features include high performance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices.
P30-65nm SBC device is manufactured using 65nm process technology.

Overview
P30-65nm SBC device provides high performance on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the Read Configuration Register (RCR) enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates technology that enables fast buffer program and erase operations. The device features a 256-word buffer to enable optimum programming performance, which can improve system programming throughput time significantly to 1.8MByte/s.

Product Features
■ High Performance:
   — 65ns initial access time for Easy BGA and QUAD+
   — 75ns initial access time for TSOP
   — 25ns 8-word asynchronous-page read mode
   — 52MHz with zero WAIT states, 17ns clock-to
      data output synchronous-burst read mode
   — 4-, 8-, 16- and continuous-word options for burst mode
   — 1.8V Low Power buffered programming at
      1.8MByte/s (Typ) using 256-word buffer
   — Buffered Enhanced Factory Programming at
      3.2MByte/s (typ) using 256-word buffer
■ Architecture:
   — Asymmetrically-blocked architecture
   — Four 32-KByte parameter blocks: top or bottom configuration
   — 128-KByte array blocks
   — Blank Check to verify an erased block
■ Voltage and Power:
   — VCC (core) voltage: 1.7V – 2.0V
   — VCCQ (I/O) voltage: 1.7V – 3.6V
   — Standby current: 30µA(Typ)/55µA(Max)
   — Continuous synchronous read current: 23mA (Typ)/28mA (Max) at 52MHz
■ Enhanced Security:
   — Absolute write protection: VPP = Vss
   — Power-transition erase/program lockout
   — Individual zero-latency block locking
   — Individual block lock-down capability
   — Password Access feature
   — One-Time Programmable Register:
   — 64 OTP bits, programmed with unique information by Numonyx
   — 2112 OTP bits, available for customer programming
■ Software:
   — 20µs (Typ) program suspend
   — 20µs (Typ) erase suspend
   — Basic Command Set and Extended Function
      Interface (EFI) Command Set compatible
   — Common Flash Interface capable
■ Density and Packaging:
   — 56-Lead TSOP (128-Mbit, 64-Mbit)
   — 64-Ball Easy BGA (128-Mbit, 64-Mbit)
   — 88-Ball QUAD+ Package (128-Mbit)
   — 16-bit wide data bus
■ Quality and Reliability:
   — JESD47E Compliant
   — Operating temperature: –40°C to +85°C
   — Minimum 100,000 erase cycles
   — 65nm process technology

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