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BF1202WR,135 Datasheet PDF - NXP Semiconductors.

Part NameDescriptionManufacturer
BF1202WR,135 N-channel dual-gate PoLo MOS-FETs NXP
NXP Semiconductors. NXP
Other PDF  no available.
BF1202WR,135 Datasheet PDF : BF1202WR,135 pdf   
BF1202WR image

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier
• Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.

 

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