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NE32484A-T1 Datasheet PDF - NEC => Renesas Technology

Part NameDescriptionManufacturer
NE32484A-T1 HETERO JUNCTION FIELD EFFECT TRANSISTOR NEC
NEC => Renesas Technology NEC
Other PDF  no available.
NE32484A-T1 Datasheet PDF : NE32484A-T1 pdf   
NE32484A-SL image

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES
• Super Low Noise Figure & High Associated Gain
   NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg ≤ 0.25 µm
• Gate Width : Wg = 200 µm

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