datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  
HOME  >>>  NEC  >>> NE3210S01 PDF

NE3210S01 Datasheet PDF - NEC => Renesas Technology

Part NameDescriptionManufacturer
NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET NEC
NEC => Renesas Technology NEC
Other PDF  no available.
NE3210S01 Datasheet PDF : NE3210S01 pdf   
NE3210S01 image

DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

FEATURES
• Super Low Noise Figure & High Associated Gain
   NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm

 

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16 
 

Other manufacturer searches related to NE3210S01

Part NameDescriptionPDFManufacturer
NE434S01 C BAND SUPER LOW NOISE HJ FET NE434S01 View California Eastern Laboratories.
NE4210S01 SUPER LOW NOISE HJ FET NE4210S01 View California Eastern Laboratories.
NE33284A SUPER LOW NOISE HJ FET NE33284A View California Eastern Laboratories.
NE3210S01 NECs SUPER LOW NOISE HJ FET NE3210S01 View California Eastern Laboratories.
EC3H01B VHF Band Low-Noise Amplifer and OSC Applications EC3H01B View SANYO -> Panasonic
MGFX36V0717 10.7 – 11.7 GHz BAND / 4W X/Ku band internally matched power GaAs FET MGFX36V0717 View MITSUBISHI ELECTRIC
NE32584C ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C View California Eastern Laboratories.
FLM8596-4F X, Ku-Band Internally Matched FET FLM8596-4F View Unspecified
FLK017WF X, Ku Band Power GaAs FET FLK017WF View Eudyna Devices Inc
FLM1011-15F X,Ku-Band Internally Matched FET FLM1011-15F View Eudyna Devices Inc

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]