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MC-4516CD641ES-A80L Datasheet PDF - NEC => Renesas Technology

Part NameDescriptionManufacturer
MC-4516CD641ES-A80L 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) NEC
NEC => Renesas Technology NEC
Other PDF  no available.
MC-4516CD641ES-A80L Datasheet PDF : MC-4516CD641ES-A80L pdf   
MC-4516CD641ES image

Description
The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words by 64 bits organization
• Clock frequency and access time from CLK
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0, BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single 3.3V ±0.3V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD
    The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
    Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

 

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