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N08M163WL1AD Datasheet PDF - NanoAmp Solutions, Inc.

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N08M163WL1AD Datasheet PDF : N08M163WL1AD pdf     
N08M163WL1A image

Overview
The N08M163WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N08M1618L2A, which has further reliability processing for life-support (Class 3) medical applications.

Features
• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 4.0µA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
• Low voltage data retention Vcc = 1.8V
• Special processing for Soft Error Rate (SER) reduction
• Automatic power down to standby mode
• Compact space saving BGA package available

 

Part Name
Description
PDF
Manufacturer
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
AMI Semiconductor
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Unspecified
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
Brilliance Semiconductor
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
512Kx16 bit Low Power Full CMOS Static RAM
Samsung
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Brilliance Semiconductor

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