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M6MGB162S4BVP Datasheet PDF - MITSUBISHI ELECTRIC

Part NameDescriptionManufacturer
M6MGB162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
Other PDF  no available.
M6MGB162S4BVP Datasheet PDF : M6MGB162S4BVP pdf   
M6MGB162S4BVP image

DESCRIPTION
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 1048576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T162S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.

FEATURES
• Access time                                        
                         Flash Memory           90ns (Max.)
                         SRAM                       85ns (Max.)
• Supply voltage                                 Vcc=2.7 ~ 3.6V
• Ambient temperature                     
                         W version                  Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
   Mobile communication  products

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