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M6MGB160S4BVP Datasheet PDF - MITSUBISHI ELECTRIC

Part NameDescriptionManufacturer
M6MGB160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
Other PDF  no available.
M6MGB160S4BVP Datasheet PDF : M6MGB160S4BVP pdf   
M6MGB160S4BVP image

DESCRIPTION
The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 2097152 bytes /1048576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

FEATURES
• Access time                                        
   Flash Memory            90ns (Max.)
   SRAM                        85ns (Max.)
• Supply voltage           Vcc=2.7 ~ 3.6V
• Ambient temperature                     
   W version                  Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
  Mobile communication  products


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