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IRF634B Datasheet PDF - Kersemi Electronic Co., Ltd.

Part NameDescriptionManufacturer
IRF634B 250V N-Channel MOSFET KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
IRF634B Datasheet PDF : IRF634B pdf   
IRFS634B image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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