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IRF1404LPBF Datasheet PDF - Kersemi Electronic Co., Ltd.

Part Name
Description
Manufacturer
IRF1404LPBF
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
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IRF1404LPBF Datasheet PDF : IRF1404LPBF pdf     
IRF1404LPBF image

Description
Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free

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Part Name
Description
PDF
Manufacturer
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 162A†)
International Rectifier
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 162A)
International Rectifier
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 202A)
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.10ohm/ Id=14A)
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
International Rectifier

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