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FQP10N60C Datasheet PDF - Kersemi Electronic Co., Ltd.

Part NameDescriptionManufacturer
FQP10N60C 600V N-Channel MOSFET KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
Other PDF  no available.
FQP10N60C Datasheet PDF : FQP10N60C pdf   
FQP10N60C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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