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FQD2N60C Datasheet PDF - Kersemi Electronic Co., Ltd.

Part NameDescriptionManufacturer
FQD2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
FQD2N60C Datasheet PDF : FQD2N60C pdf   
FQU2N60C image

These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant


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