Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

HOME >>> Iscsemi >>> MJ1000 PDF

MJ1000 Datasheet PDF - Inchange Semiconductor

Part Name	Description	Manufacturer
MJ1000	Silicon NPN Darlington Power Transistor	Inchange Semiconductor
MJ1000 Datasheet PDF :

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min.)
·High DC Current Gain-
   : hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
   : VCE (sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS
·Designed for use as output devices in complementary general purpose amplifier applications.

Page Links : 1 2

Other manufacturer searches related to MJ1000

Part Name	Description	PDF	Manufacturer
2SD1525	Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)		Toshiba
2SD2088	Silicon NPN Epitaxial Type (Darlington Power Transistor) Transistor		Toshiba
2SD2449	Silicon NPN Triple Diffused Type (Darlington power transistor)Transistor		Toshiba
2SD2385	Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)		Toshiba
2SD1508	Silicon NPN Epitaxial Type Transistor (PCT process) (Darlington power transistor)		Toshiba
2N6056	NPN Darlington Silicon Power Transistor		ON Semiconductor
2N6059	SILICON NPN POWER DARLINGTON TRANSISTOR		STMicroelectronics
2SD1140	Silicon NPN Triple Diffused Type (PCT Process) (Darlington Power Transistor) Transistor		Toshiba
TIP162	Silicon NPN Darlington Power Transistor		New Jersey Semiconductor
TIP150	Silicon NPN Darlington Power Transistor		New Jersey Semiconductor

Share Link :

한국어 简体中文日本語 русский español