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MJ1000 Datasheet PDF - Inchange Semiconductor

Part NumberMJ1000 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Darlington Power Transistor
MJ1000 Datasheet PDF : MJ1000 pdf   
MJ1000 image

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min.)
·High DC Current Gain-
   : hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
   : VCE (sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS
·Designed for use as output devices in complementary general purpose amplifier applications.

 

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