datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  
HOME  >>>  Iscsemi  >>> MJ1000 PDF

MJ1000 Datasheet PDF - Inchange Semiconductor

Part NameDescriptionManufacturer
MJ1000 Silicon NPN Darlington Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
MJ1000 Datasheet PDF : MJ1000 pdf   
MJ1000 image

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min.)
·High DC Current Gain-
   : hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
   : VCE (sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS
·Designed for use as output devices in complementary general purpose amplifier applications.

 

Page Links : 1  2 

 

Other manufacturer searches related to MJ1000

Part NameDescriptionPDFManufacturer
2SD1525 Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 View Toshiba
2SD2088 Silicon NPN Epitaxial Type (Darlington Power Transistor) Transistor 2SD2088 View Toshiba
2SD2449 Silicon NPN Triple Diffused Type (Darlington power transistor)Transistor 2SD2449 View Toshiba
2SD2385 Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 View Toshiba
2SD1508 Silicon NPN Epitaxial Type Transistor (PCT process) (Darlington power transistor) 2SD1508 View Toshiba
2N6056 NPN Darlington Silicon Power Transistor 2N6056 View ON Semiconductor
2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR 2N6059 View STMicroelectronics
2SD1140 Silicon NPN Triple Diffused Type (PCT Process) (Darlington Power Transistor) Transistor 2SD1140 View Toshiba
TIP162 Silicon NPN Darlington Power Transistor TIP162 View New Jersey Semiconductor
TIP150 Silicon NPN Darlington Power Transistor TIP150 View New Jersey Semiconductor

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]