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MJ1000 Datasheet PDF - Inchange Semiconductor

Part Name	Description	Manufacturer
MJ1000	Silicon NPN Darlington Power Transistor	Inchange Semiconductor
MJ1000 Datasheet PDF :

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min.)
·High DC Current Gain-
   : hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
   : VCE (sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS
·Designed for use as output devices in complementary general purpose amplifier applications.

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