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G40N60C3 Datasheet PDF - Intersil

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G40N60C3 Datasheet PDF : G40N60C3 pdf     
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75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.

Features
• 75A, 600V, TC= 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Page Link's: 1  2  3  4  5  6  7 
 

Part Name
Description
PDF
Manufacturer
75A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor
70A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor
60A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor
70A, 600V, UFS Series N-Channel IGBT
Harris Semiconductor
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Unspecified
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Semiconductor
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Semiconductor
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor

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